Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits

ABSTRACT

An integrated circuit includes at least one transistor over a substrate. A first guard ring is disposed around the at least one transistor. The first guard ring has a first type dopant. A second guard ring is disposed around the first guard ring. The second guard ring has a second type dopant. A first doped region is disposed adjacent to the first guard ring. The first doped region has the second type dopant. A second doped region is disposed adjacent to the second guard ring. The second doped region has the first type dopant. The first guard ring, the second guard ring, the first doped region, and the second doped region are capable of being operable as a first silicon controlled rectifier (SCR) to substantially release an electrostatic discharge (ESD).

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of U.S. Provisional PatentApplication Ser. No. 61/178,613 filed on May 15, 2009, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to the field of semiconductorcircuits, and more particularly, to integrated circuits using guardrings for electrostatic discharge (ESD) systems, and methods for formingthe integrated circuits.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. The scaling of IC techniques tonanometer regime has increased power dissipation. The increased powerdissipation causes several problems including reducing battery life inmobile systems, expensive packaging and cooling solutions and can alsoresult in chip failures. Of the various components contributing to powerdissipation, leakage or static power dissipation is growing very fastand is predicted to exceed dynamic power dissipation in the near future.

In another aspect, various devices have been proposed for providingspecial functions. For example, diffused metal-gate-oxide semiconductor(DMOS) transistors have been proposed for high voltage operations. Tointegrate the DMOS transistors with conventional bipolar-CMOStransistors, a process named bipolar-CMOS-DMOS (BCD) process has beendeveloped.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the numbers and dimensions of the various features may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a schematic drawing showing an exemplary integrated circuitincluding guard rings disposed around transistors.

FIG. 2A is a schematic cross-sectional view of an exemplary integratedcircuit including guard rings and transistors.

FIG. 2B is a schematic cross-sectional view of another exemplaryintegrated circuit including guard rings and transistors.

FIG. 3 is a schematic drawing illustrating a layout of an exemplaryintegrated circuit including guard rings disposed around transistors.

FIG. 4 is a flowchart illustrating a method for forming an exemplaryintegrated circuit including guard rings around transistors.

FIG. 5 is a schematic drawing showing a system including an exemplaryintegrated circuit coupled with a converter.

DETAILED DESCRIPTION

The conventional DMOS transistor includes a laterally diffused drainthat can desirably prevent oxide damage due to a high voltage dropapplied between the drain and gate of the conventional DMOS transistor.It is found that if an electrostatic discharge (ESD) occurs at the drainof the conventional DMOS transistor, the conventional DMOS transistoritself cannot survive and release the ESD. The conventional DMOStransistor may be damaged.

To avoid the ESD situation, a p+ doped region has been proposed to beformed within the drain of the conventional DMOS transistor. The p+doped region, n-type well, p-type well, and the source of theconventional DMOS transistor can constitute a silicon controlledrectifier (SCR). The SCR can release the ESD occurring at the drain ofthe DMOS transistor to the ground.

Based on the foregoing, integrated circuits that are capable ofsubstantially releasing an ESD, systems, and methods for forming theintegrated circuits are desired.

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of thedisclosure. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a feature on, connected to, and/or coupled toanother feature in the present disclosure that follows may includeembodiments in which the features are formed in direct contact, and mayalso include embodiments in which additional features may be formedinterposing the features, such that the features may not be in directcontact. In addition, spatially relative terms, for example, “lower,”“upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,”“top,” “bottom,” etc. as well as derivatives thereof (e.g.,“horizontally,” “downwardly,” “upwardly,” etc.) are used for ease of thepresent disclosure of one features relationship to another feature. Thespatially relative terms are intended to cover different orientations ofthe device including the features.

FIG. 1 is a schematic drawing showing an exemplary integrated circuitincluding guard rings disposed around transistors. In FIG. 1, anintegrated circuit 100 can include at least one transistor, e.g.,transistors 110 a-110 e. The integrated circuit 100 can include a powerswitching circuit, a liquid crystal display (LCD) driver, and/or otherintegrated circuit that is capable of functioning at a high operatingvoltage.

Drains of the transistors 110 a-110 e can be coupled with a voltagesource, e.g., VDD, and sources of the transistors 110 a-110 e can becoupled with another voltage source, e.g., VSS or ground. Thetransistors 110 a-110 e can be diffused metal-gate-oxide (DMOS)transistors or transistors that are capable of being operable at anoperating voltage of about 26 V or more. In various embodiments, theoperating voltage can be around 40 V, 60 V, or more.

The integrated circuit 100 can include a first guard ring, e.g., guardring 120, and a second guard ring, e.g., guard ring 130. The guard ring120 can be disposed around the transistors 110 a-110 e. The guard ring130 can be disposed around the guard ring 120. A first doped region,e.g., a doped region 125, can be disposed adjacent to the guard ring120. A second doped region, e.g., doped region 135, can be disposedadjacent to the guard ring 130.

The guard ring 120 can have a first type dopant, e.g., p-type dopant.The guard ring 130 can have a second type dopant, e.g., n-type dopant.The doped region 125 can have the second type dopant, e.g., n-typedopant. The doped region 135 can have the first type dopant, e.g.,p-type dopant. The guard ring 120 can be coupled with the sources of thetransistors 110 a-110 e. The guard ring 130 can be coupled with thedrains of the transistors 110 a-110 e. The guard rings 120 and 130 canbe configured to substantially electrically insulate the transistors 110a-110 e from other transistors, devices, diodes, and/or circuits outsidethe guard rings 120 and 130.

The guard rings 120, 130 and the doped regions 125, 135 can be operableas a silicon controlled rectifier (SCR) 150 to substantially release anelectrostatic discharge (ESD). For example, if an ESD occurs at thedrains of the transistors 110 a-110 e, the ESD can be substantiallyreleased through the SCR 150 to the power source VSS. As noted, thetransistors 110 a-110 e can be operable at the high operating voltage,e.g., 40 V, 60 V, or more. In various embodiments, the SCR 150 of theintegrated circuit 100 can meet a human body model (HBM) of anautomobile specification. The HBM can be around 8 KV or more.

FIG. 2A is a schematic cross-sectional view of an exemplary integratedcircuit including guard rings and transistors. In FIG. 2A, an integratedcircuit 200 a can be similar to the integrated circuit 100. Theintegrated circuit 200 a can include transistors 210 a and 210 b, eachof which is similar to one of the transistors 110 a-110 e shown in FIG.1.

In FIG. 2A, the transistors 210 a and 210 b can be formed over asubstrate 201. In various embodiments, the substrate 201 can include anelementary semiconductor including silicon or germanium in crystal,polycrystalline, or an amorphous structure; a compound semiconductorincluding silicon carbide, gallium arsenic, gallium phosphide, indiumphosphide, indium arsenide, and indium antimonide; an alloysemiconductor including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, andGaInAsP; any other suitable material; or combinations thereof. In oneembodiment, the alloy semiconductor substrate may have a gradient SiGefeature in which the Si and Ge composition changes from one ratio at onelocation to another ratio at another location of the gradient SiGefeature. In another embodiment, the alloy SiGe is formed over a siliconsubstrate. In another embodiment, a SiGe substrate is strained.Furthermore, the semiconductor substrate may be a semiconductor oninsulator, such as a silicon on insulator (SOI), or a thin filmtransistor (TFT). In some examples, the semiconductor substrate mayinclude a doped epi layer or a buried layer. In other examples, thecompound semiconductor substrate may have a multilayer structure, or thesubstrate may include a multilayer compound semiconductor structure.

In various embodiments, an epi-layer 202, e.g., a p-type epi-layer, canbe formed over the substrate 201. An n-type buried layer (NBL) 203 canbe formed over the epi-layer 202. A deep well 204, e.g., a deep p-typewell (DPW), can be formed over the NBL 203. A well 217, e.g., ahigh-voltage n-type well (HVNW), can be formed over the deep well 204.Isolation structures 205 a-205 h, e.g., field oxide layers or shallowtrench isolation (STI) structures, can be disposed between guard ringsand between sources and drains of the transistors 210 a and 210 b. Invarious embodiments, the wells and layers described above are configuredfor the high-voltage operation of the transistors 210 a and 210 b. Oneof skill in the art can add more or remove the wells and/or the layersto achieve a desired integrated circuit for the high-voltage operation.

Referring again to FIG. 2A, drains 211 of the transistors 210 a and 210b can be coupled with a power source, e.g., VDD. Sources 213 a and 213 bof the transistors 210 a and 210 b, respectively, can be coupled with apower source, e.g., VSS or ground. Doped regions 215 a and 215 b, e.g.,p-type doped regions, can be formed around the sources 213 a and 213 b,respectively. The doped regions 215 a and 215 b can be operable toprovide channels for the transistors 210 a and 210 b, respectively. Invarious embodiments, the doped regions 215 a and 215 b can be referredto as p-type body regions. Doped regions 217 a and 217 b can be disposedadjacent to the sources 213 a and 213 b, respectively, and coupled withthe power source VSS.

The integrated circuit 200 a can include a guard ring 220, e.g., ap-type guard ring, including p-type wells 220 a, 220 b and p+ dopedregions 221 a, 221 b. In various embodiments, the p+ doped regions 221 aand 221 b can be referred to as pickup regions for the p-type wells 220a and 220 b, respectively. A guard ring 230, e.g., an n-type guard ring,can be disposed around the guard ring 220. The guard ring 230 caninclude n-type wells 230 a, 230 b and n+ doped regions 231 a, 231 b. Invarious embodiments, the n+ doped regions 231 a and 231 b can bereferred to as pickup regions for the n-type wells 230 a and 230 b,respectively.

Referring to FIG. 2A, the integrated circuit 200 a can include dopedregions 225 a and 225 b, e.g., n+ doped regions, disposed adjacent tothe p+ doped regions 221 a and 221 b, respectively. In variousembodiments, the doped regions 225 a and 225 b can be coupled with thepower source VSS. Doped regions 235 a and 235 b, e.g., p+ doped regions,can be disposed adjacent to the n+ doped regions 231 a and 231 b,respectively. The doped regions 235 a and 235 b can be coupled with thepower source VDD. In various embodiments, the doped regions 225 a and225 b can be spaced from the drains 211 by the guard ring 220. In othervarious embodiments, the doped regions 225 a and 225 b can be spacedfrom the doped regions 235 a and 235 b by the isolation structure 205 band 205 g, respectively. The isolation structure 205 b and 205 g caninsulate the doped regions 225 a and 225 b from the doped regions 235 aand 235 b.

It is found that the doped region 225 a, the p-type well 220 a, and then-type well 230 a can serve as an npn transistor. The doped region 235a, the n-type well 230 a, and the p-type well 220 a can serve as a pnptransistor. The npn and pnp transistors can be operable as an SCR. If anESD occurs at the drains 211 of the transistors 210 a and 210 b, the SCRincluding the npn and pnp transistors can be triggered to substantiallyrelease the ESD to the power source VSS.

In various embodiments, the integrated circuit 200 a can include a guardring 240, e.g., a p-type guard ring, including p-type wells 240 a, 240 band p+ doped regions 241 a, 241 b. In various embodiments, the p+ dopedregions 241 a and 241 b can be referred to as pickup regions for thep-type wells 240 a and 240 b, respectively. The integrated circuit 200 acan include doped regions (not shown), e.g., n+ doped regions, disposedadjacent to the p+ doped regions 241 a and 241 b. In variousembodiments, the doped regions (not shown) adjacent to the p+ dopedregions 241 a and 241 b can be coupled with the power source VSS. It isfound that the doped region (not shown) adjacent to the p+ doped region241 a, the p-type well 240 a, and the n-type well 230 a can form an npntransistor. The doped region 235 a, the n-type well 230 a, and thep-type well 240 a can form a pnp transistor. The npn and pnp transistorscan be operable as another SCR. If an ESD occurs at the drains 211 ofthe transistors 210 a and 210 b, the SCR including the npn and pnptransistors can be triggered to release the ESD to the power source VSS.

FIG. 2B is a schematic cross-sectional view of another exemplaryintegrated circuit including guard rings and transistors. Items of FIG.2B that are the same items in FIG. 2A are indicated by the samereference numerals. In FIG. 2B, an integrated circuit 200 b can includedoped regions 216 a and 216 b, e.g., p-type doped regions. The dopedregions 216 a and 216 b can be disposed within the p-type wells 220 aand 220 b, respectively. The doped regions 216 a and 216 b can becoupled with the n-type wells 230 a and 230 b, respectively. The dopedregions 216 a and 216 b can be disposed around the sources 213 a and 213b, respectively. The doped regions 216 a and 216 b can be operable toprovide channels for the transistors 210 a and 210 b, respectively. Invarious embodiments, the doped regions 216 a and 216 b can be referredto as p-type body regions.

It is noted that either one of both of the SCR formed between the guardrings 220 and 230 and the SCR formed between the guard rings 230 and 240can be operable to release the ESD. One of skill in the art can use one,two, or more SCRs to release the ESD. It is also noted that the numberof the guard rings described above in conjunction with FIGS. 1, 2A, and2B is merely exemplary. One of skill in the art can modify the number ofthe guard rings to achieve a desired number of the SCR. The dopant typesof the guard rings, wells, layers, and/or doped regions described abovein conjunction with FIGS. 1, 2A, and 2B are merely exemplary. One ofskill in the art can modify or change the dopant type to achieve adesired integrated circuit having the SCR for ESD.

FIG. 3 is a schematic drawing illustrating a layout of an exemplaryintegrated circuit including guard rings disposed around transistors.Items of FIG. 3 that are the same items in FIG. 2A are indicated by thesame reference numerals, increased by 100. In FIG. 3, contacts 312 canbe coupled with the drains 211 (shown in FIG. 2A). Contacts 314 a and314 b can be coupled with the sources 213 a and 213 b (shown in FIG.2A), respectively. Contacts 316 a and 316 b can be coupled with thedoped regions 217 a and 217 b (shown in FIG. 2A), respectively.

Referring to FIG. 3, a doped region 325 can be disposed adjacent to aguard ring 320. In various embodiments, the doped region 325 can bedisposed around the guard ring 320. A doped region 335 can be disposedadjacent to a guard ring 330. In various embodiments, the guard ring 330can be disposed around the doped region 335. The guard ring 320, thedoped region 325, and the guard ring 330 can serve as a pnp transistor.The guard ring 330, the doped region 335, and the guard ring 320 canserve as an npn transistor. If an ESD occurs at the drains of thetransistors 310 a and 310 b, the pnp and npn transistors can function asa SCR to release the ESD.

It is found that the doped regions 325 and 335 can be disposed adjacentto the guard rings 320 and 330, respectively. In various embodiments,the guard rings 320 and 330 can be formed and then the doped regions 325and 335 can be formed within the guard rings 320 and 330, respectively.By taking portions of the guard rings 320 and 330, forming the dopedregions 325 and 335 is substantially free from increasing the area ofthe integrated circuit 300.

FIG. 4 is a flowchart illustrating a method for forming an exemplaryintegrated circuit including guard rings around transistors. In FIG. 4,a step 410 can form a first guard ring disposed around at least onetransistor over a substrate. For example, the step 410 can form theguard ring 220 around the transistors 210 a and 210 b over the substrate201 (shown in FIG. 2A). As noted, the guard ring 220 can include thep-type wells 220 a, 220 b and p+ doped regions 221 a, 221 b. In variousembodiments, the p-type wells 220 a, 220 b and p+ doped regions 221 a,221 b can be formed by implantation processes. In various embodiments,the transistors 210 a and 210 b can be formed by a process forming DMOStransistors.

Referring to FIG. 4, a step 420 can form a second guard ring around thefirst guard ring. For example, the step 420 can form the guard ring 230around the guard ring 220 (shown in FIG. 2A). As noted, the guard ring230 can include the n-type wells 230 a, 230 b and n+ doped regions 231a, 231 b. In various embodiments, the n-type wells 230 a, 230 b and n+doped regions 231 a, 231 b can be formed by implantation processes.

Referring to FIG. 4, a step 430 can form a first doped region disposedadjacent to the first guard ring. For example, the step 430 can form thedoped regions 225 a and 225 b adjacent to the guard ring 220. The dopedregions 225 a and 225 b can be formed by an implantation process. Invarious embodiments, the doped regions 225 a, 225 b and the drains 211of the transistors 210 a, 210 b can be formed by the same implantationprocess. The process 400 can be free from adding additional step to formthe doped regions 225 a and 225 b. In other embodiments, the dopedregions 225 a, 225 b and the drains 211 of the transistors 210 a, 210 bcan be formed by different implantation processes.

Referring again to FIG. 4, a step 440 can form a second doped regiondisposed adjacent to the second guard ring. For example, the step 440can form the doped regions 235 a and 235 b adjacent to the guard ring230. The doped regions 235 a and 235 b can be formed by an implantationprocess. In various embodiments, the doped regions 235 a, 235 b and thesources 213 a and 213 b of the transistors 210 a and 210 b can be formedby the same implantation process. The process 400 can be free fromadding an additional step to form the doped regions 235 a and 235 b. Inother embodiments, the doped regions 235 a, 235 b and the sources 213 a,213 b of the transistors 210 a, 210 b can be formed by differentimplantation processes.

In various embodiments, the process 400 can include a step (not shown)forming a third guard ring around the second guard ring. For example,the step can form the guard ring 240 around the guard ring 230 (shown inFIG. 2A). As noted, the guard ring 240 can include the p-type wells 240a, 240 b and p+ doped regions 241 a, 241 b. In various embodiments, theguard rings 220 and 240 can be formed by the same implantation process.In other embodiments, the guard rings 220 and 240 can be formed bydifferent implantation process steps.

FIG. 5 is a schematic drawing showing a system including an exemplaryintegrated circuit coupled with a converter. In FIG. 5, a system 500 caninclude an integrated circuit 501 coupled with a converter 510. Theconverter 510 is capable of receiving an external power voltage,converting the external power voltage to the operating voltage VDD. Theoperating voltage VDD can be applied to the integrated circuit 501 foroperations. In various embodiments, the converter 510 can be a DC-to-DCconverter, an AC-to-DC converter, or other voltage converter that canprovide a high operating voltage VDD, e.g., about 40 V or more. Invarious embodiments, the integrated circuit 501 can be similar to one ofthe integrated circuits 100-300 described above in conjunction withFIGS. 1-3, respectively.

In various embodiments, the integrated circuit 501 and the converter 510can be formed within a system that can be physically and electricallycoupled with a printed wiring board or printed circuit board (PCB) toform an electronic assembly. The electronic assembly can be part of anelectronic system such as computers, wireless communication devices,computer-related peripherals, entertainment devices, or the like.

In various embodiments, the system 500 including the integrated circuit501 can provide an entire system in one IC, so-called system on a chip(SOC) or system on integrated circuit (SOIC) devices. These SOC devicesmay provide, for example, all of the circuitry needed to implement acell phone, personal data assistant (PDA), digital VCR, digitalcamcorder, digital camera, MP3 player, or the like in a singleintegrated circuit.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. An integrated circuit comprising: at least one transistor over asubstrate; a first guard ring disposed around the at least onetransistor, the first guard ring having a first type dopant; a secondguard ring disposed around the first guard ring, the second guard ringhaving a second type dopant; a first doped region disposed adjacent tothe first guard ring, the first doped region having the second typedopant; and a second doped region disposed adjacent to the second guardring, the second doped region having the first type dopant, wherein thefirst guard ring, the second guard ring, the first doped region, and thesecond doped region are capable of being operable as a first siliconcontrolled rectifier (SCR) to substantially release an electrostaticdischarge (ESD).
 2. The integrated circuit of claim 1 furthercomprising: a third guard ring disposed around the second guard ring,the third guard ring having the first type dopant; and a third dopedregion disposed adjacent to the third guard ring, wherein the secondguard ring, the third guard ring, the second doped region, and the thirddoped region are capable of being operable as a second siliconcontrolled rectifier (SCR) to substantially release the electrostaticdischarge (ESD).
 3. The integrated circuit of claim 1, wherein the atleast one transistor comprises at least one diffused metal-gate-oxide(DMOS) transistor and the at least one DMOS transistor is capable ofbeing operable if an operating voltage of the DMOS transistor is about26 V or more.
 4. The integrated circuit of claim 3, wherein the at leastone DMOS transistor comprises a drain region, the drain region has thesecond type dopant, and the drain region is spaced from the first dopedregion by the first guard ring.
 5. The integrated circuit of claim 1,wherein the SCR is capable of providing a human body model (HBM) ofabout 8 KV or more.
 6. The integrated circuit of claim 1, wherein thefirst doped region is spaced from the second doped region by anisolation structure.
 7. The integrated circuit of claim 1 furthercomprising: a fourth doped region having the first type dopant, whereinthe fourth doped region is disposed within the first guard ring andcoupled with the second guard ring.
 8. A system comprising: a converter;and an integrated circuit coupled with the converter, the integratedcircuit comprising: at least one transistor over a substrate; a firstguard ring disposed around the at least one transistor, the first guardring having a first type dopant; a second guard ring disposed around thefirst guard ring, the second guard ring having a second type dopant; afirst doped region disposed adjacent to the first guard ring, the firstdoped region having the second type dopant; and a second doped regiondisposed adjacent to the second guard ring, the second doped regionhaving the first type dopant, wherein the first guard ring, the secondguard ring, the first doped region, and the second doped region arecapable of being operable as a first silicon controlled rectifier (SCR)to substantially release an electrostatic discharge (ESD).
 9. The systemof claim 8, wherein the integrated circuit further comprises: a thirdguard ring disposed around the second guard ring, the third guard ringhaving the first type dopant; and a third doped region disposed adjacentto the third guard ring, wherein the second guard ring, the third guardring, the second doped region, and the third doped region are capable ofbeing operable as a second silicon controlled rectifier (SCR) tosubstantially release the electrostatic discharge (ESD).
 10. The systemof claim 8, wherein the at least one transistor comprises at least onediffused metal-gate-oxide (DMOS) transistor and the at least one DMOStransistor is capable of being operable if an operating voltage of theDMOS transistor is about 26 V or more.
 11. The system of claim 10,wherein the at least one DMOS transistor comprises a drain region, thedrain region has the second type dopant, and the drain region is spacedfrom the first doped region by the first guard ring.
 12. The system ofclaim 8, wherein the SCR is capable of providing a human body model(HBM) of about 8 KV or more.
 13. The system of claim 8, wherein thefirst doped region is spaced from the second doped region by anisolation structure.
 14. An integrated circuit comprising: at least onetransistor over a substrate; a first guard ring disposed around the atleast one transistor, the first guard ring comprising a first wellhaving a first type dopant and a first pickup region having the firsttype dopant; a second guard ring disposed around the first guard ring,the second guard ring comprising a second well having a second typedopant and a second pickup region having the second type dopant; and acenter well having the second type dopant, wherein a drain of the atleast one transistor is formed in the center well and the first guardring is disposed around the center well, wherein the first pickup regionis connected to a first voltage and the second pickup region isconnected to a second voltage higher than the first voltage.
 15. Theintegrated circuit of claim 14, further comprising a doped region formedaround a source of the at least one transistor, the doped region havingthe first type dopant and configured to provide a channel for the atleast one transistor.
 16. The integrated circuit of claim 15, whereinthe doped region is positioned between the first well and the firstpickup region.
 17. The integrated circuit of claim 14, furthercomprising a third guard ring disposed around the second guard ring, thethird guard ring comprising a third well having the first type dopantand a third pickup region having the first type dopant, wherein thethird pickup region is connected to the first voltage.
 18. Theintegrated circuit of claim 17, wherein the third pickup region isseparated from the second pickup region by an isolation structure. 19.The integrated circuit of claim 14, further comprising: an epitaxiallayer having the first dopant type disposed on the substrate; and aburied layer having the second dopant type disposed on the epitaxiallayer, wherein the at least one transistor, the first guard ring and thesecond guard ring are disposed on the buried layer.